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absolute maximum ratings parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 12* i d @ v gs = 4.5v, t c =100c continuous drain current 10.2 i dm pulsed drain current 48 p d @ t c = 25c max. power dissipation 15.6 w linear derating factor 0.13 w/c v gs gate-to-source voltage 12 v e as single pulse avalanche energy 43 mj i ar avalanche current 12 a e ar repetitive avalanche energy 1.6 mj dv/dt peak diode recovery dv/dt 2.85 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s) weight 0.98 (typical) g c a www.irf.com 1 technology product summary part number radiation level r ds(on) i d irhlf87y20 100k rads (si) 32 m ? 12a* irhlf83y20 300k rads (si) 32 m ? 12a* for footnotes refer to the last page pre-irradiation radiation hardened irhlf87y20 logic level power mosfet 20v, n-channel thru-hole (to-39) features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight to-39 international rectifier?s r8 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ic?s, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available.
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irhlf87y20 2 www.irf.com pre-irradiation source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 12* i sm pulse source current (body diode) ?? 48 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 12a, v gs = 0v t rr reverse recovery time ? ? 41 ns t j = 25c, i f = 12a, di/dt 100a/ s q rr reverse recovery charge ? ? 51 nc v dd 20v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 20 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.03 ? v/c reference to 25c, i d = 250 a voltage r ds(on) static drain-to-source on-state ? 27 32 v gs = 4.5v, i d = 10.2a resistance ? 26 31 v gs = 7.0v, i d = 10.2a v gs(th) gate threshold voltage 1.0 ? 2.3 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -4.7 ? mv/c g fs forward transconductance 20 ? ? s v ds = 15v, i ds = 10.2a i dss zero gate voltage drain current ? ? 1.0 v ds = 16v ,v gs = 0v ??10 v ds = 16v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 12v i gss gate-to-source leakage reverse ? ? -100 v gs = -12v q g total gate charge ? 20 27 v gs = 5.5v, i d =12a q gs gate-to-source charge ? 4.0 5.7 nc v ds = 10v q gd gate-to-drain (?miller?) charge ? 4.5 8.5 t d (on) turn-on delay time ? 17 21 v dd = 10v, i d = 12a, t r rise time ? 63 114 v gs = 5.5v, r g = 2.35 ? t d (off) turn-off delay time ? 26 30 t f fall time ? 12 22 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in from pack.) to source lead (6mm/0.25in from pack.)with source wire internally bonded from source pin to drain pad c iss input capacitance ? 2431 ? v gs = 0v, v ds = 20v c oss output capacitance ? 592 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 143 ? na nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 8.0 c/w r g gate resistance ? 0.94 ? ? f = 1.0mhz, open drain
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www.irf.com 3 pre-irradiation irhlf87y20 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil- ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads(si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 20 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.3 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 12v i gss gate-to-source leakage reverse ? -100 v gs = -12v i dss zero gate voltage drain current ? 1.0 a v ds = 16v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) ? 32 m ? v gs = 4.5v, i d = 10.2a v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 12a 1. part numbers irhlf87y20, irhlf83y20 table 2. typical single event effect safe operating area 0 4 8 12 16 20 -10 -8 -6 -4 -2 0 bias vgs (v) bias vds (v) let=37 5% let=60 5% let=81 5% let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -1v -2v -3v -5v -10v 37 5% 298 5% 38 5% 18 18 8 4 60 5% 320 5% 32 7.5% 18 18 15 12 8 - 81 5% 375 7.5% 28 7.5% 18 18 12 6 -
irhlf87y20 4 www.irf.com pre-irradiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 11.522.533.54 v gs , gate-to-source voltage (v) 01 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 20v 2 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 12a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width, tj =150c 2.2v vgs top 10v 7.5v 5.5v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.2v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 25c vgs top 10v 7.0v 5.5v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.2v 2..2v
www.irf.com 5 pre-irradiation irhlf87y20 fig 8. typical threshold voltage vs temperature fig 7 typical drain-to-source breakdown voltage vs temperature fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 30 32 34 36 38 40 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 250 0 2 4 6 8 10 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 70 80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 12a t j = 25c t j = 150c 0 10 20 30 40 50 i d , drain current (a) 0 10 20 30 40 50 60 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c ( m ? ) t j = 25c t j = 150c v gs = 4.5v
irhlf87y20 6 www.irf.com pre-irradiation fig 11. typical source-to-drain diode forward voltage fig 12. maximum drain current vs. case temperature fig 9. typical capacitance vs. drain-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1.0 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 25 50 75 100 125 150 t c , case temperature (c) 0 4 8 12 16 20 i d , d r a i n c u r r e n t ( a ) limited by package 0 4 8 1216202428323640 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 6.0v i d = 12a for test circuit see figure 17 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c
www.irf.com 7 pre-irradiation irhlf87y20 fig 15. maximum effective transient thermal impedance, junction-to-case fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.4a 7.6a bottom 12a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by rds(on) 100 s dc
irhlf87y20 8 www.irf.com pre-irradiation q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
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www.irf.com 9 pre-irradiation irhlf87y20 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 16 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 20v, starting t j = 25c, l = 0.6mh peak i l = 12a, v gs =12v i sd 12a, di/dt 423a/ s, v dd 20v, t j 150c footnotes: case outline and dimensions ? to-205af (modified to-39) legend ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/2013 1- source 2- gate 3- drain notes switching speed maximum limits are based on manufacturing test equipment and capability.

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